IRFU3707PBF
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- Mfr.Part #
- IRFU3707PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A IPAK
- Stock
- 21,350
- In Stock ：
- 21,350
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Resistance :
- 13Ohm
- Voltage - Rated DC :
- 30V
- Rise Time :
- 78ns
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Nominal Vgs :
- 3 V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Dual Supply Voltage :
- 30V
- Turn On Delay Time :
- 78 ns
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- IPAK (TO-251)
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Rds On Max :
- 13 mΩ
- Fall Time (Typ) :
- 3.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 87W Tc
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 15A, 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Published :
- 2000
- Series :
- HEXFET®
- Number of Pins :
- 4
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation :
- 87W
- Packaging :
- Tube
- Drain to Source Resistance :
- 17.5mOhm
- Threshold Voltage :
- 3V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 15V
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 1.99nF
- Continuous Drain Current (ID) :
- 61A
- Drain to Source Breakdown Voltage :
- 30V
- Current Rating :
- 61A
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Max Operating Temperature :
- 175°C
- Turn-Off Delay Time :
- 11.8 ns
- Datasheets
- IRFU3707PBF
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N-Channel Tube 13mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-251-3 Short Leads, IPak, TO-251AA
IRFU3707PBF Overview
The maximum input capacitance of this device is 1990pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 61A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11.8 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 17.5mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 78 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRFU3707PBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17.5mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
IRFU3707PBF Applications
There are a lot of Infineon Technologies
IRFU3707PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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