IRFU3607PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

140W

RoHS Status :

ROHS3 Compliant

Height :

6.22mm

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

43 ns

Continuous Drain Current (ID) :

56A

Dual Supply Voltage :

75V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

80A

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Elements :

1

Mount :

Through Hole

Drain-source On Resistance-Max :

0.009Ohm

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Terminations :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Published :

2008

Recovery Time :

50 ns

Factory Lead Time :

12 Weeks

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

96 ns

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Drain to Source Breakdown Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Packaging :

Tube

Series :

HEXFET®

Termination :

Through Hole

Vgs (Max) :

±20V

Width :

2.3876mm

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 100µA

Turn On Delay Time :

16 ns

Power Dissipation-Max :

140W Tc

Rise Time :

110ns

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.7056mm