IRFU3303PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

16 ns

Mount :

Through Hole

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

31mOhm

Height :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

31mOhm @ 18A, 10V

Turn On Delay Time :

11 ns

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Input Capacitance :

750pF

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Fall Time (Typ) :

28 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Max Operating Temperature :

150°C

Packaging :

Tube

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

2.3876mm

Power Dissipation :

57W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Rise Time :

99ns

Drain to Source Breakdown Voltage :

30V

Drain to Source Voltage (Vdss) :

30V

Current Rating :

33A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

33A

Number of Pins :

3

Length :

6.7056mm

Vgs (Max) :

±20V

Rds On Max :

31 mΩ

Published :

2004

Supplier Device Package :

IPAK (TO-251)

Power Dissipation-Max :

57W Tc