IRFU220PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

4.8A

Weight :

329.988449mg

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

Width :

2.38mm

ECCN Code :

EAR99

Length :

6.73mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Height :

6.22mm

Qualification Status :

Not Qualified

Number of Pins :

3

Rise Time :

22ns

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Packaging :

Tube

Voltage - Rated DC :

200V

Power Dissipation-Max :

2.5W Ta 42W Tc

Factory Lead Time :

8 Weeks

Turn On Delay Time :

7.2 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

4.8A

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Pbfree Code :

yes

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.9A, 10V

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Terminations :

3

REACH SVHC :

Unknown

Number of Elements :

1

Resistance :

800mOhm

Turn-Off Delay Time :

19 ns

Fall Time (Typ) :

13 ns

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

200V

Threshold Voltage :

4V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Lead Free :

Lead Free