IRFU220

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.9A, 10V

ECCN Code :

EAR99

Packaging :

Tube

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Pulsed Drain Current-Max (IDM) :

20A

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.6Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain Current-Max (Abs) (ID) :

5A

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Published :

2000

Number of Terminations :

3

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Position :

Single

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

43W Tc

Peak Reflow Temperature (Cel) :

245

Avalanche Energy Rating (Eas) :

46 mJ

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ