IRFU1205PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

69ns

Number of Elements :

1

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Voltage - Rated DC :

55V

Pulsed Drain Current-Max (IDM) :

160A

Width :

2.3876mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

69W

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

55V

RoHS Status :

ROHS3 Compliant

Resistance :

27mOhm

Turn On Delay Time :

7.3 ns

Avalanche Energy Rating (Eas) :

210 mJ

Mount :

Through Hole

Series :

HEXFET®

Mounting Type :

Through Hole

Power Dissipation-Max :

107W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Current Rating :

44A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

Height :

6.22mm

Number of Pins :

3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.7056mm

Turn-Off Delay Time :

47 ns

Packaging :

Tube

Continuous Drain Current (ID) :

44A

Published :

2004

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Fall Time (Typ) :

60 ns

Terminal Position :

Single

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

20A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V