IRFU1205

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1998

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Surface Mount :

No

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

20A

Series :

HEXFET®

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

160A

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

210 mJ

Drain-source On Resistance-Max :

0.027Ohm

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Power Dissipation-Max :

107W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON