IRFU110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

6.22mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6.9 ns

Rds On (Max) @ Id, Vgs :

540m Ω @ 900mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Length :

6.73mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

Published :

2010

ECCN Code :

EAR99

Number of Pins :

3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Width :

2.38mm

Number of Channels :

1

Continuous Drain Current (ID) :

4.3A

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Rise Time :

16ns

Mount :

Through Hole

Pbfree Code :

yes

Radiation Hardening :

No

Fall Time (Typ) :

9.4 ns

JESD-609 Code :

e3

Packaging :

Tube

Resistance :

540mOhm

FET Type :

N-Channel

Weight :

329.988449mg

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

75 mJ

REACH SVHC :

Unknown

Number of Elements :

1

Threshold Voltage :

4V

Power Dissipation-Max :

25W Tc

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation :

25W

Drive Voltage (Max Rds On,Min Rds On) :

10V