IRFIB41N15DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5.5V

Height :

16.12mm

Case Connection :

Isolated

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Radiation Hardening :

No

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Dual Supply Voltage :

150V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

ECCN Code :

EAR99

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Rise Time :

63ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

2003

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

Element Configuration :

Single

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

41A

Width :

4.826mm

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

150V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.045Ohm

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Current Rating :

41A

Nominal Vgs :

5.5 V

Factory Lead Time :

14 Weeks

Number of Elements :

1

Power Dissipation :

200W

Length :

10.6172mm

Avalanche Energy Rating (Eas) :

470 mJ

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

150V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Power Dissipation-Max :

48W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Packaging :

Tube