IRFI1310N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

36m Ω @ 13A, 10V

Drain-source On Resistance-Max :

0.036Ohm

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Number of Terminations :

3

Mounting Type :

Through Hole

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

420 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

140A

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

24A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Published :

1998

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

56W Tc

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Series :

HEXFET®

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-220-3 Full Pack

Additional Feature :

AVALANCHE RATED