IRFI1310NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

40 ns

Power Dissipation-Max :

56W Tc

Number of Terminations :

3

Width :

4.826mm

Element Configuration :

Single

Current Rating :

36A

Transistor Application :

SWITCHING

Rise Time :

56ns

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

36m Ω @ 13A, 10V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Termination :

Through Hole

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

22A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Turn-Off Delay Time :

45 ns

Power Dissipation :

45W

Published :

2003

Series :

HEXFET®

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

420 mJ

Dual Supply Voltage :

100V

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Isolation Voltage :

2.5kV

Continuous Drain Current (ID) :

24A

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Height :

9.8mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Mount :

Through Hole

Length :

10.6172mm

Voltage - Rated DC :

100V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole