IRFI1310NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.8mm

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

2003

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.6172mm

Drain to Source Breakdown Voltage :

100V

Width :

4.826mm

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

3

Termination :

Through Hole

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

24A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Mount :

Through Hole

Radiation Hardening :

No

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

45 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

40 ns

Rise Time :

56ns

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Series :

HEXFET®

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

36m Ω @ 13A, 10V

Threshold Voltage :

4V

FET Type :

N-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Case Connection :

Isolated

Isolation Voltage :

2.5kV

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Current Rating :

36A

Avalanche Energy Rating (Eas) :

420 mJ

Power Dissipation-Max :

56W Tc

Number of Pins :

3

Power Dissipation :

45W

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

22A