IRFF333

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

25 W

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-205AF (TO-39)

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On, Min Rds On) :

-

Terminal Form :

Wire

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-205AF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

O-MBCY-W3

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

350 V

JESD-609 Code :

e0

FET Feature :

-

Number of Elements :

1

Package :

Bulk

Subcategory :

FET General Purpose Power

Drain to Source Voltage (Vdss) :

350 V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain Current-Max (Abs) (ID) :

3 A

Power Dissipation (Max) :

25W

FET Type :

N-Channel

Number of Terminals :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

12 A

Package Shape :

Round

Rds On (Max) @ Id, Vgs :

-

Operating Temperature :

-

Vgs (Max) :

-

Configuration :

Single

Package / Case :

TO-205AF Metal Can

Current - Continuous Drain (Id) @ 25°C :

3A

Series :

-

Vgs(th) (Max) @ Id :

-

Manufacturer :

International Rectifier

Qualification Status :

Not Qualified

Product Status :

Active

Drain-source On Resistance-Max :

1.5 Ω

Operating Mode :

ENHANCEMENT MODE