IRFF223

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bulk

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Product Status :

Active

FET Type :

N-Channel

JESD-30 Code :

O-MBCY-W3

JEDEC-95 Code :

TO-205AF

DS Breakdown Voltage-Min :

150 V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Vgs (Max) :

±20V

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

1.2 Ω

Power Dissipation (Max) :

20W (Tc)

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Case Connection :

DRAIN

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Terminal Form :

Wire

Input Capacitance (Ciss) (Max) @ Vds :

450 pF @ 25 V

Drain to Source Voltage (Vdss) :

150 V

Series :

-

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Pulsed Drain Current-Max (IDM) :

12 A

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2A, 10V

Number of Terminals :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-205AF Metal Can

Supplier Device Package :

TO-205AF (TO-39)

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

Round

FET Technology :

METAL-OXIDE SEMICONDUCTOR