IRFF321

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

450 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Drain to Source Voltage (Vdss) :

350 V

FET Feature :

-

Power Dissipation (Max) :

20W (Tc)

Package :

Bulk

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 1.25A, 10V

Product Status :

Active

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Supplier Device Package :

TO-205AF (TO-39)

Package / Case :

TO-205AF Metal Can

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

20V

Series :

-