IRF4905STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

170W Tc

Terminal Position :

Single

Surface Mount :

yes

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

42A

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.02Ohm

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Published :

1997

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

55V

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

140 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Number of Terminations :

2

Transistor Application :

SWITCHING

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

280A

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB