IRF4104

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Through Hole

Power Dissipation-Max :

140W Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Terminations :

3

Published :

2003

Terminal Position :

Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

Drain Current-Max (Abs) (ID) :

75A

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

470A

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0055Ohm

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

220 mJ

FET Type :

N-Channel