IRF4104PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

40V

ECCN Code :

EAR99

Turn On Delay Time :

16 ns

Width :

4.826mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V

Rise Time :

130ns

Length :

10.668mm

REACH SVHC :

No SVHC

Number of Pins :

3

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

75A

Case Connection :

DRAIN

Published :

2003

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

77 ns

Turn-Off Delay Time :

38 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Pulsed Drain Current-Max (IDM) :

470A

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Number of Elements :

1

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Recovery Time :

35 ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

75A

Power Dissipation-Max :

140W Tc

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

140W

Resistance :

5.5mOhm

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Threshold Voltage :

4V

Avalanche Energy Rating (Eas) :

220 mJ

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Height :

9.017mm

Mount :

Through Hole

Radiation Hardening :

No