IRF4104PBF
- Mfr.Part #
- IRF4104PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A TO220AB
- Stock
- 69,906
- In Stock :
- 69,906
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Current Rating :
- 75A
- Vgs (Max) :
- ±20V
- Resistance :
- 5.5mOhm
- Power Dissipation :
- 140W
- Radiation Hardening :
- No
- Rise Time :
- 130ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 25V
- Drain to Source Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Series :
- HEXFET®
- ECCN Code :
- EAR99
- Width :
- 4.826mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 16 ns
- Recovery Time :
- 35 ns
- Height :
- 9.017mm
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Published :
- 2003
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 470A
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 75A, 10V
- Continuous Drain Current (ID) :
- 75A
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Turn-Off Delay Time :
- 38 ns
- Power Dissipation-Max :
- 140W Tc
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 40V
- Fall Time (Typ) :
- 77 ns
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.668mm
- Package / Case :
- TO-220-3
- Datasheets
- IRF4104PBF
IRF4104PBF Documents

N-Channel Tube 5.5m Ω @ 75A, 10V ±20V 3000pF @ 25V 100nC @ 10V TO-220-3
IRF4104PBF Description
IRF4104PBF HEXFET? Power MOSFET achieves extraordinarily low on-resistance per silicon area by utilizing the most recent processing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRF4104PBF Features
-
Lead-free
-
Fast Switching
-
Ultra Low On-Resistance
-
175°C Operating Temperature
-
Advanced Process Technology
-
Repetitive Avalanche Allowed up to Tjmax
IRF4104PBF Applications
-
Industrial
-
Automotive
-
Communications equipment
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