IRF4905STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

280A

DS Breakdown Voltage-Min :

55V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

42A

Published :

1997

Drain-source On Resistance-Max :

0.02Ohm

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

FET Type :

P-Channel

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

140 mJ

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

Not Qualified

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Transistor Application :

SWITCHING

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

20m Ω @ 38A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 200W Tc

Terminal Position :

Single

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing