IRF4905PBF

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Mfr.Part #
IRF4905PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 55V 74A TO220AB
Stock
5,895
In Stock :
5,895

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Dual Supply Voltage :
-55V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Fall Time (Typ) :
96 ns
Pulsed Drain Current-Max (IDM) :
260A
Peak Reflow Temperature (Cel) :
250
Threshold Voltage :
-4V
Factory Lead Time :
12 Weeks
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
30
Power Dissipation :
200W
Drain-source On Resistance-Max :
0.02Ohm
Length :
10.5156mm
Rise Time :
99ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
Max Junction Temperature (Tj) :
175°C
Element Configuration :
Single
Lead Pitch :
2.54mm
Mount :
Through Hole
REACH SVHC :
No SVHC
Nominal Vgs :
-4 V
Number of Elements :
1
Turn-Off Delay Time :
61 ns
Mounting Type :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
55V
Vgs (Max) :
±20V
Termination :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Turn On Delay Time :
18 ns
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
20m Ω @ 38A, 10V
Width :
4.69mm
Drain Current-Max (Abs) (ID) :
64A
Recovery Time :
130 ns
Continuous Drain Current (ID) :
-74A
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
-55V
Lead Free :
Contains Lead, Lead Free
Voltage - Rated DC :
-55V
Power Dissipation-Max :
200W Tc
Height :
19.8mm
Number of Channels :
1
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Published :
1997
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Series :
HEXFET®
Number of Pins :
3
Current Rating :
-74A
Radiation Hardening :
No
Package / Case :
TO-220-3
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF4905PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Channels:1, Number of Pins:3, Package / Case:TO-220-3, IRF4905PBF pinout, IRF4905PBF datasheet PDF, IRF4905PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF4905PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF4905PBF


P-Channel Tube 20m Ω @ 38A, 10V ±20V 3400pF @ 25V 180nC @ 10V 55V TO-220-3

Description


The IRF4905PBF is a TO-220AB single P channel HEXFET power MOSFET with a voltage of -55V. This MOSFET has a low resistance per silicon area, a dynamic dv/dt rating, is rugged, rapid switching, and completely avalanche certified. As a result, power MOSFETs are well known for providing high efficiency and reliability in a wide range of applications.



Features


  • Fast Switching

  • P-Channel

  • Fully Avalanche Rated

  • Lead-Free

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature



Applications


  • Power-Over-Ethernet (PoE)

  • Solar Inverters

  • Automotive Applications

  • Switch, Buck and Synchronous Rectification

  • Uninterruptible Power Supplies (UPS)

  • Small Motor Control

  • Switch Mode Power Supplies (SMPS)


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