IRF4905PBF
- Mfr.Part #
- IRF4905PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 74A TO220AB
- Stock
- 5,895
- In Stock :
- 5,895
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 200W Tc
- Published :
- 1997
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Element Configuration :
- Single
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200W
- Width :
- 4.69mm
- Drain Current-Max (Abs) (ID) :
- 64A
- Lead Free :
- Contains Lead, Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- FET Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 38A, 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 18 ns
- Pulsed Drain Current-Max (IDM) :
- 260A
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Current Rating :
- -74A
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Voltage - Rated DC :
- -55V
- Turn-Off Delay Time :
- 61 ns
- Recovery Time :
- 130 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Drain to Source Breakdown Voltage :
- -55V
- Peak Reflow Temperature (Cel) :
- 250
- Termination :
- Through Hole
- Case Connection :
- DRAIN
- Length :
- 10.5156mm
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.02Ohm
- Lead Pitch :
- 2.54mm
- Rise Time :
- 99ns
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Fall Time (Typ) :
- 96 ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- -74A
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Threshold Voltage :
- -4V
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Series :
- HEXFET®
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Vgs :
- -4 V
- Height :
- 19.8mm
- Mounting Type :
- Through Hole
- Dual Supply Voltage :
- -55V
- Max Junction Temperature (Tj) :
- 175°C
- Datasheets
- IRF4905PBF
IRF4905PBF Documents

P-Channel Tube 20m Ω @ 38A, 10V ±20V 3400pF @ 25V 180nC @ 10V 55V TO-220-3
Description
The IRF4905PBF is a TO-220AB single P channel HEXFET power MOSFET with a voltage of -55V. This MOSFET has a low resistance per silicon area, a dynamic dv/dt rating, is rugged, rapid switching, and completely avalanche certified. As a result, power MOSFETs are well known for providing high efficiency and reliability in a wide range of applications.
Features
-
Fast Switching
-
P-Channel
-
Fully Avalanche Rated
-
Lead-Free
-
Advanced Process Technology
-
Ultra Low On-Resistance
-
Dynamic dv/dt Rating
-
175°C Operating Temperature
Applications
-
Power-Over-Ethernet (PoE)
-
Solar Inverters
-
Automotive Applications
-
Switch, Buck and Synchronous Rectification
-
Uninterruptible Power Supplies (UPS)
-
Small Motor Control
-
Switch Mode Power Supplies (SMPS)
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