IPD65R950CFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

11A

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.9A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.95Ohm

Mounting Type :

Surface Mount

Turn On Delay Time :

9 ns

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

43 ns

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

650V

Power Dissipation-Max :

36.7W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

FET Type :

N-Channel

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Avalanche Energy Rating (Eas) :

50 mJ

Rise Time :

6.5ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Fall Time (Typ) :

13.8 ns

Number of Terminations :

2

Additional Feature :

High Reliability

Series :

CoolMOS™

Drain to Source Breakdown Voltage :

700V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 10V