IPD60R170CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 300µA

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

14A

Surface Mount :

yes

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Number of Terminations :

2

JESD-609 Code :

e3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

60 mJ

Pulsed Drain Current-Max (IDM) :

51A

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation-Max :

76W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

170m Ω @ 6A, 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1199pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™ CFD7

ECCN Code :

EAR99

Vgs (Max) :

±20V

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain-source On Resistance-Max :

0.17Ohm