IPD60R1K4C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Power Dissipation-Max :

28.4W Tc

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.1A, 10V

Case Connection :

DRAIN

Series :

CoolMOS™ C6

Transistor Element Material :

SILICON

Number of Pins :

3

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Lead Free :

Contains Lead

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

26 mJ

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

3.2A

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

600V