IPD60R1K4C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.2A

Case Connection :

DRAIN

Number of Terminations :

2

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Surface Mount :

yes

Series :

CoolMOS™

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.1A, 10V

Pin Count :

4

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Published :

2011

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

8A

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

28.4W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

26 mJ

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED