IPD60R1K0CEAUMA1
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- Mfr.Part #
- IPD60R1K0CEAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- CONSUMER
- Stock
- 28,316
- In Stock ：
- 28,316
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -40°C
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Operating Temperature :
- 150°C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Max Dual Supply Voltage :
- 600V
- JEDEC-95 Code :
- TO-252
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Drain to Source Resistance :
- 860mOhm
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 12A
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Number of Terminations :
- 2
- Lead Free :
- Contains Lead
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Factory Lead Time :
- 18 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- Published :
- 2008
- Case Connection :
- DRAIN
- Datasheets
- IPD60R1K0CEAUMA1
Tape & Reel (TR) 600V
IPD60R1K0CEAUMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.There is no pulsed drain current maximum for this device based on its rated peak drain current 12A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 860mOhm.With its 600V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.
IPD60R1K0CEAUMA1 Features
the avalanche energy rating (Eas) is 46 mJ
based on its rated peak drain current 12A.
single MOSFETs transistor is 860mOhm
a 600V drain to source voltage (Vdss)
IPD60R1K0CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD60R1K0CEAUMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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