IPD65R950C6ATMA1

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Mfr.Part #
IPD65R950C6ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 4.5A TO252-3
Stock
32,957
In Stock :
32,957

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Halogen Free :
Halogen Free
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.95Ohm
Number of Terminations :
2
Number of Channels :
1
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
12 Weeks
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Avalanche Energy Rating (Eas) :
50 mJ
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
650V
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
328pF @ 100V
Power Dissipation :
37W
Fall Time (Typ) :
13.6 ns
Transistor Application :
SWITCHING
Max Dual Supply Voltage :
650V
Gate Charge (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs(th) (Max) @ Id :
3.5V @ 200µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) :
±20V
FET Type :
N-Channel
Continuous Drain Current (ID) :
4.5A
Rise Time :
5.2ns
Turn-Off Delay Time :
41 ns
Series :
CoolMOS™ C6
Weight :
3.949996g
Power Dissipation-Max :
37W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Delay Time :
6.6 ns
Rds On (Max) @ Id, Vgs :
950m Ω @ 1.5A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Lead Free :
Contains Lead, Lead Free
Published :
2008
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
4.5A Tc
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Datasheets
IPD65R950C6ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R950C6ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, IPD65R950C6ATMA1 pinout, IPD65R950C6ATMA1 datasheet PDF, IPD65R950C6ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R950C6ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD65R950C6ATMA1


N-Channel Tape & Reel (TR) 950m Ω @ 1.5A, 10V ±20V 328pF @ 100V 15.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R950C6ATMA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 328pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 41 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPD65R950C6ATMA1 Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 41 ns


IPD65R950C6ATMA1 Applications


There are a lot of Infineon Technologies
IPD65R950C6ATMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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