IPD65R660CFDBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Power Dissipation :

62.5W

Power Dissipation-Max :

62.5W Tc

Drain-source On Resistance-Max :

0.66Ohm

JESD-30 Code :

R-PSSO-G2

Max Dual Supply Voltage :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Continuous Drain Current (ID) :

6A

Turn-Off Delay Time :

40 ns

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Factory Lead Time :

16 Weeks

Rise Time :

8ns

Terminal Form :

Gull wing

Turn On Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mount :

Surface Mount

Transistor Element Material :

SILICON

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2011

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Series :

CoolMOS™

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns