IPD65R660CFDAATMA1
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- Mfr.Part #
- IPD65R660CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 6A TO252-3
- Stock
- 4,895
- In Stock ：
- 4,895
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.66Ohm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Dual Supply Voltage :
- 650V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4.5V @ 214.55μA
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 62.5W Tc
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- JEDEC-95 Code :
- TO-252AA
- Turn-Off Delay Time :
- 40 ns
- Fall Time (Typ) :
- 10 ns
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 660m Ω @ 3.22A, 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Operating Temperature :
- -40°C~150°C TJ
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 543pF @ 100V
- Rise Time :
- 8ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Halogen Free :
- Halogen Free
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 17A
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Turn On Delay Time :
- 9 ns
- Avalanche Energy Rating (Eas) :
- 115 mJ
- Continuous Drain Current (ID) :
- 6A
- Datasheets
- IPD65R660CFDAATMA1
N-Channel Tape & Reel (TR) 660m Ω @ 3.22A, 10V ±20V 543pF @ 100V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R660CFDAATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 115 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 543pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 6A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 17A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD65R660CFDAATMA1 Features
the avalanche energy rating (Eas) is 115 mJ
a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
based on its rated peak drain current 17A.
IPD65R660CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPD65R660CFDAATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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