IPD65R650CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.65Ohm

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 0.21mA

Packaging :

Tape and Reel (TR)

Published :

2015

Weight :

3.949996g

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

RoHS Status :

RoHS Compliant

Number of Channels :

1

Pbfree Code :

yes

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Power Dissipation-Max :

86W Tc

Terminal Form :

Gull wing

FET Type :

N-Channel

FET Feature :

Super Junction

Transistor Element Material :

SILICON

Mount :

Surface Mount

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

10.1A Tc

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Continuous Drain Current (ID) :

10.1A