IPD65R420CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Position :

Single

Halogen Free :

Halogen Free

Power Dissipation-Max :

83.3W Tc

Series :

Automotive, AEC-Q101, CoolMOS™

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.4A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.42Ohm

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Published :

2008

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Avalanche Energy Rating (Eas) :

227 mJ

Vgs(th) (Max) @ Id :

4.5V @ 345μA

Max Dual Supply Voltage :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mount :

Surface Mount

Continuous Drain Current (ID) :

8.7A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

27A