IPD65R420CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Power Dissipation-Max :

83.3W Tc

Published :

2008

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

8.7A

Max Dual Supply Voltage :

650V

Factory Lead Time :

18 Weeks

Number of Terminations :

2

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

227 mJ

Pulsed Drain Current-Max (IDM) :

27A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101, CoolMOS™

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.4A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 345μA

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Terminal Position :

Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.42Ohm

Lead Free :

Contains Lead

Halogen Free :

Halogen Free