IPD65R380C6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

10.6A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

215 mJ

Factory Lead Time :

26 Weeks

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Published :

2008

Drain-source On Resistance-Max :

0.38Ohm

Pbfree Code :

No

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Series :

CoolMOS™

Pin Count :

4

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

650V

Surface Mount :

yes

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

29A

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Power Dissipation-Max :

83W Tc

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V