IPD650P06NMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Drain-source On Resistance-Max :

0.065Ohm

FET Type :

P-Channel

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

88A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

329 mJ

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Rds On (Max) @ Id, Vgs :

65m Ω @ 22A, 10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 30V

Factory Lead Time :

18 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 1.04mA

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

22A