IPD64CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Series :

OptiMOS™

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

68A

Pin Count :

4

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

44W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

64m Ω @ 17A, 10V

Reach Compliance Code :

Unknown

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.064Ohm

Avalanche Energy Rating (Eas) :

34 mJ

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Drain Current-Max (Abs) (ID) :

17A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

569pF @ 50V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Number of Elements :

1

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

4V @ 20µA

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE