IPD60R950C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Case Connection :

DRAIN

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Drain Current-Max (Abs) (ID) :

4.4A

Terminal Position :

Single

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Series :

CoolMOS™

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Published :

2008

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

37W Tc

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

46 mJ

Drain-source On Resistance-Max :

0.95Ohm