IPD60R750E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

48W Tc

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V

Number of Pins :

3

Published :

2011

Rds On Max :

750 mΩ

Supplier Device Package :

PG-TO252-3

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

7ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Fall Time (Typ) :

12 ns

Input Capacitance :

373pF

Series :

CoolMOS™ E6

Drain to Source Voltage (Vdss) :

600V

Number of Channels :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

750mOhm @ 2A, 10V

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

680mOhm

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Turn On Delay Time :

9 ns

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

50 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

5.7A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

FET Type :

N-Channel

Max Operating Temperature :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

3.949996g