IPD60R750E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

750mOhm @ 2A, 10V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

48W Tc

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

12 ns

Number of Channels :

1

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

50 ns

Series :

CoolMOS™ E6

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Continuous Drain Current (ID) :

5.7A

RoHS Status :

RoHS Compliant

Supplier Device Package :

PG-TO252-3

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Max Operating Temperature :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

7ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

600V

Drain to Source Resistance :

680mOhm

Rds On Max :

750 mΩ

Input Capacitance :

373pF

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Operating Temperature :

-55°C~150°C TJ

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V