IPD60R650CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.65Ohm

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ CE

Number of Elements :

1

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

133 mJ

Power Dissipation-Max :

82W Tc

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

Published :

2016

Pulsed Drain Current-Max (IDM) :

19A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

7A

DS Breakdown Voltage-Min :

600V

RoHS Status :

ROHS3 Compliant