IPD60R650CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.65Ohm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2014

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Weight :

3.949996g

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Rise Time :

8ns

Turn On Delay Time :

10 ns

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Power Dissipation-Max :

63W Tc

Terminal Form :

Gull wing

Number of Terminations :

2

Series :

CoolMOS™ CE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

58 ns

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

7A