IPD60R600P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.7A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Vgs(th) (Max) @ Id :

4V @ 80μA

Terminal Position :

Single

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

2

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.6Ohm

Power Dissipation-Max :

30W Tc

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 400V

Pulsed Drain Current-Max (IDM) :

16A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Avalanche Energy Rating (Eas) :

17 mJ

Vgs (Max) :

±20V

Series :

CoolMOS™ P7

Number of Elements :

1

ECCN Code :

EAR99

Transistor Application :

SWITCHING