IPD60R600P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Power Dissipation-Max :

30W Tc

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

16A

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

650V

Drain-source On Resistance-Max :

0.6Ohm

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 400V

Published :

2014

Avalanche Energy Rating (Eas) :

17 mJ

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 80μA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Series :

CoolMOS™ P7

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.7A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing