IPD60R600E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2015

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

19A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Power Dissipation-Max :

63W Tc

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

JESD-609 Code :

e3

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

133 mJ

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.6Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

4

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain to Source Voltage (Vdss) :

600V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7.3A