IPD60R600CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Threshold Voltage :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

550 pF @ 100 V

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Gate to Source Voltage (Vgs) :

20 V

Technology :

MOSFET (Metal Oxide)

Avalanche Energy Rating (Eas) :

144 mJ

Continuous Drain Current (ID) :

6.1 A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Element Configuration :

Single

Min Operating Temperature :

-55 °C

Product Status :

Active

Channel Type :

N

Input Capacitance :

13 nF

Package Shape :

RECTANGULAR

RoHS :

Compliant

Surface Mount :

yes

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600 V

Packaging :

Cut Tape

Power Dissipation :

60 W

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current Id :

6.1

Power Dissipation-Max (Abs) :

60 W

Current - Continuous Drain (Id) @ 25°C :

6.1A (Tc)

Drain-source On Resistance-Max :

0.6 Ω

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

PG-TO252-3-313

Mounting Type :

Surface Mount

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Drain to Source Resistance :

600 mΩ

Rds On Max :

3.4 mΩ

REACH SVHC :

No SVHC

Manufacturer :

Infineon Technologies AG

Drain to Source Voltage (Vdss) :

60 V

Turn-On Delay Time :

17 ns

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.3A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Max Power Dissipation :

150 W

Terminal Position :

Single

Terminal Form :

Gull wing

Max Operating Temperature :

150 °C

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

60W (Tc)

Dual Supply Voltage :

650 V

Factory Lead Time :

1 Week

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Drain Current-Max (Abs) (ID) :

6.1 A

Package :

Bulk

Rise Time :

12 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Pin Count :

4

Nominal Vgs :

3 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Feature :

-

Subcategory :

FET General Purpose Power

Pulsed Drain Current-Max (IDM) :

15 A

DS Breakdown Voltage-Min :

600 V