IPD60R600C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

9ns

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain-source On Resistance-Max :

0.6Ohm

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

63W Tc

Reach Compliance Code :

not_compliant

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

63W

Number of Pins :

3

Turn On Delay Time :

12 ns

Series :

CoolMOS™ C6

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Fall Time (Typ) :

13 ns

Number of Channels :

1

Turn-Off Delay Time :

80 ns

FET Type :

N-Channel

Terminal Form :

Gull wing

Weight :

3.949996g

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Case Connection :

DRAIN

Number of Terminations :

2

Continuous Drain Current (ID) :

7.3A

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Mount :

Surface Mount

Published :

2008

Gate to Source Voltage (Vgs) :

20V