IPD60R460CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Published :

2014

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

600V

Turn-Off Delay Time :

70 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Series :

CoolMOS™ CE

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9.1A Tc

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

9ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

460m Ω @ 3.4A, 10V

Pulsed Drain Current-Max (IDM) :

26A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

9.1A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V

Number of Channels :

1

Drain-source On Resistance-Max :

0.46Ohm

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Transistor Application :

SWITCHING

Power Dissipation-Max :

74W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Weight :

3.949996g

Case Connection :

DRAIN

Element Configuration :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Gate to Source Voltage (Vgs) :

20V