IPD60R380C6ATMA1
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- Mfr.Part #
- IPD60R380C6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.6A TO252-3
- Stock
- 20,188
- In Stock ：
- 20,188
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 83W
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Drain to Source Breakdown Voltage :
- 600V
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3.5V @ 320µA
- Number of Channels :
- 1
- Max Dual Supply Voltage :
- 600V
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Tc
- Turn On Delay Time :
- 15 ns
- Reach Compliance Code :
- not_compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- Weight :
- 3.949996g
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 3.8A, 10V
- JESD-609 Code :
- e3
- Rise Time :
- 10ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- High Voltage
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 83W Tc
- Published :
- 2008
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 10.6A
- Turn-Off Delay Time :
- 110 ns
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- CoolMOS™ C6
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Fall Time (Typ) :
- 9 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- IPD60R380C6ATMA1
N-Channel Tape & Reel (TR) 380m Ω @ 3.8A, 10V ±20V 700pF @ 100V 32nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R380C6ATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 700pF @ 100V.This device conducts a continuous drain current (ID) of 10.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD60R380C6ATMA1 Features
a continuous drain current (ID) of 10.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
IPD60R380C6ATMA1 Applications
There are a lot of Infineon Technologies
IPD60R380C6ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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