IPD60R360P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

26A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs(th) (Max) @ Id :

4V @ 140μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

27 mJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

360m Ω @ 2.7A, 10V

Power Dissipation-Max :

41W Tc

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 400V

Terminal Position :

Single

ECCN Code :

EAR99

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.36ohm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2014

Series :

CoolMOS™ P7

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V