IPD60R2K0PFD7SAUMA1
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- Mfr.Part #
- IPD60R2K0PFD7SAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 3A TO252-3
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- CoolMOS™PFD7
- Vgs(th) (Max) @ Id :
- 4.5V @ 30μA
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8nC @ 10V
- Power Dissipation-Max :
- 20W Tc
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 134pF @ 400V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drain to Source Voltage (Vdss) :
- 650V
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 500mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- Datasheets
- IPD60R2K0PFD7SAUMA1
N-Channel 2 Ω @ 500mA, 10V ±20V 134pF @ 400V 3.8nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R2K0PFD7SAUMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 134pF @ 400V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD60R2K0PFD7SAUMA1 Features
a 650V drain to source voltage (Vdss)
IPD60R2K0PFD7SAUMA1 Applications
There are a lot of Infineon Technologies
IPD60R2K0PFD7SAUMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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