IPD60R2K0C6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2 Ω @ 760mA, 10V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

6A

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

2Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

22.3W Tc

Qualification Status :

Not Qualified

Pbfree Code :

No

Published :

2008

Series :

CoolMOS™

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Number of Elements :

1

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

11 mJ

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99