IPD60R1K5CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

8 ns

Avalanche Energy Rating (Eas) :

26 mJ

Weight :

3.949996g

Series :

CoolMOS™ CE

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

8A

Lead Free :

Lead Free

Vgs (Max) :

±20V

Published :

2015

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.1A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

7ns

ECCN Code :

EAR99

Power Dissipation-Max :

28W Tc

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Element Configuration :

Single

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V