IMX1T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Min Operating Temperature :

-55°C

VCEsat-Max :

0.4 V

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN SILVER COPPER

Continuous Collector Current :

150mA

HTS Code :

8541.21.00.95

DC Current Gain-Min (hFE) :

120

Gain Bandwidth Product :

180MHz

Max Operating Temperature :

150°C

Mount :

Surface Mount

Transition Frequency :

180MHz

Emitter Base Voltage (VEBO) :

7V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

60V

Radiation Hardening :

No

Terminal Form :

Gull wing

Published :

2001

hFE Min :

120

Number of Elements :

2

Element Configuration :

Single

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

JESD-609 Code :

e1

Max Collector Current :

150mA

Factory Lead Time :

26 Weeks

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Package / Case :

SMD/SMT

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Saturation Voltage :

400mV