IMT4T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

120V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

120V

hFE Min :

180

Number of Terminations :

6

Gain Bandwidth Product :

140MHz

Collector Base Voltage (VCBO) :

-120V

Mount :

Surface Mount

Terminal Form :

Gull wing

Max Collector Current :

50mA

Voltage - Rated DC :

-120V

JESD-609 Code :

e1

Current Rating :

-50mA

Number of Elements :

2

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Package / Case :

SC-74, SOT-457

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA ICBO

VCEsat-Max :

0.5 V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN SILVER COPPER

Power Dissipation :

300mW

Published :

2005

Base Part Number :

MT4

Number of Pins :

6

Factory Lead Time :

9 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-5V

HTS Code :

8541.21.00.75

Transition Frequency :

140MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Element Configuration :

Dual

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

500mV

Polarity :

PNP