IMT4T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

6

Transistor Element Material :

SILICON

Transistor Type :

2 PNP (Dual)

Transition Frequency :

140MHz

Element Configuration :

Dual

Number of Elements :

2

Mounting Type :

Surface Mount

Voltage - Rated DC :

-120V

Radiation Hardening :

No

VCEsat-Max :

0.5 V

Number of Terminations :

6

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

-120V

Gain Bandwidth Product :

140MHz

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA ICBO

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

Base Part Number :

MT4

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Operating Temperature :

150°C TJ

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Max Collector Current :

50mA

Factory Lead Time :

9 Weeks

Lead Free :

Lead Free

Package / Case :

SC-74, SOT-457

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

-50mA

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

120V

Max Breakdown Voltage :

120V

Terminal Finish :

TIN SILVER COPPER

Published :

2005

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

500mV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

JESD-609 Code :

e1

Emitter Base Voltage (VEBO) :

-5V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Polarity :

PNP

hFE Min :

180